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Prof. Dr. Şeref Kalem

Bahçeşehir Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi

Elektrik-Elektronik Mühendisliği Bölümü

MAKALELER

  1. Seref Kalem, Si nanopillar arrays as possible electronic device platforms, https://doi.org/10.1016/j.sse.2021.108102, Solid-State Electronics Volume 183, September 2021, 108102
  2. H. Cinkaya et al., Structural properties of Ge-Sb-Te alloys, Solid-State Electronics Volume 185, November 2021, 108101, doi.org/10.1016/j.sse.2021.108101
  3. Seref Kalem, 1320 nm Photon Source from Deuterium Treated, IEEE Open Journal of Nanotechnology, under revision, 2020.
  4. Z. E. Kaya ; S. B. Tekin ; S. Kalem, Energy harvesting power management circuit design in 22nm FDSOI technology, 2018 p. 1-4, 2018 IEEE Xplore DOI: 10.1109/ULIS.2018.8354748
  5. Z. E. Kaya ; S. B. Tekin ; S. Kalem, Design of an FPGA-based RRAM parameter measurement platform, P 1407 - 1411, 2018. IEEE Xplore DOI: 10.1109/ICIT.2018.8352386
  6. S. B. Tekin ; S. Kalem ; Z. E. Kaya ; E. Jalaguier, Electrical characterization of HfO2 based resistive RAM devices having different bottom electrode metallizations, IEEE Xplore DOI: 10.1109/ULIS.2018.8354734
  7. S. Kalem, SB Tekin, ZE Kaya, AE Hannas and V Sundström, “Si measurements: SiOx on Si”, IEEE Xplore, Proc. EUROSOI-ULIS, p.235-238, 2017. DOI: 10.1109/ULIS.2017.7962571
  8. S. Kalem, SB Tekin & R. Roelofs “Feasibility demonstration of new e-NVM cells suitable for integration at 28nm”, IEEE Xplore, Proc. EUROSOI-ULIS, p.53, 2017. DOI: 10.1109/ULIS.2017.7962599
  9. S. Kalem, " Controlling photon emission from silicon for photonic applications ", Proc. SPIE 9364, Oxide-based Materials and Devices VI, 93641P (March 13, 2015); doi:10.1117/12.2177640; http://dx.doi.org/10.1117/12.2177640
  10. Şeref Kalem Defect studies in strain-relaxed Si1-xGex alloys, Turk. J. Phys., 37, (2013), 275-282
  11. S. Kalem, Ö.Arthursson, P.Werner, “Ellipsometry studies of Si/Ge superlattices with embedded Ge dots”, Applied Physics-A, Volume 112, Issue 3, pp 555-559, 2013
  12. S. Kalem, P.Werner, V.Talalaev, “Near-IR Photoluminescence from Si/Ge Nanowire Grown Silicon Wafers” Applied Physics-A, Volume 112, Issue 3, pp 561-567 2013.
  13. S Kalem, P Werner, O Arthursson, V Talalaev, B Nilsson, M Hagberg, H Frederiksen and U Sodervall “Black silicon with high density and high aspect ratio nanowhiskers”, Nanotechnology 22 (2011) 235307 (8pp) doi:10.1088/0957-4484/22/23/235307
  14. S. Kalem, P. Werner, V.Talalaev, M.Becker, Ö.Arthursson and N. Zakharov, “Photoluminescence from Silicon nanoparticles embedded in ammonium silicon hexafluoride”, Nanotechnology 21 (2010) 435701 Nanotechnology, 21, 435701-8 (2010)
  15. Seref Kalem, Örjan Arthursson, Igor Romandic Formation of germanates on germanium by chemical vapor treatment, Thin Solid Films 518 (2010) 2377–2380 http://www.sciencedirect.com/science/article/pii/S0040609009016071
  16. Seref Kalem, Örjan Arthursson, Igor Romandic Formation of germanates on germanium by chemical vapor treatment, Thin Solid Films 518 (2010) 2377–2380 http://www.sciencedirect.com/science/article/pii/S0040609009016071
  17. S. Kalem, Ö. Arthursson, I. Romandic, “Transformation of Germanium to fluogermanates” Applied Physics-A 98, 423(2010). http://www.springerlink.com/openurl.asp?genre=article&id=doi:10.1007/s00339-009-5411-z.
  18. S. Kalem, P. Werner, B. Nilsson, V.G. Talalaev, M. Hagberg, Ö. Arthursson, U. Södervall, “Controlled thinning and surface smoothening of Silicon nanopillars“, Nanotechnology 20, 445303(2009). Nanotechnology, 20, 445303-7 (2009)
  19. S. Kalem “Self-organization of ammonium silicon hexafluoride complex low-dimensional structures on Silicon”, Superlattices and Microstructures 44 (2008) 705–713. http://dx.doi.org/10.1016/j.spmi.2008.07.003
  20. S. Kalem, I. Romandic, A. Theuwis Optical characterization of dislocation free Ge and GeOI wafers, Materials Science in Semiconductor Processing 9 (2006) 753–758. http://dx.doi.org/10.1016/j.mssp.2006.08.035.
  21. S. Kalem Possible low-k solutions and other potential applications, European Semiconductor 26, 31(2004). http://www.eurosemi.eu.com/front-end/features-full.php?id=5492
  22. S. Kalem Synthesis of ammonium silicon fluoride cryptocrystals on Silicon, Applied Surface Science 236, 336(2004) http://arxiv.org/abs/cond-mat/0410606
  23. S. Kalem Sub-gap excited photoluminescence in III-V compound semiconductor heterostructures Physica Status Solidi (b)221, 517(2000).
  24. S. Kalem, A. Curtis, H.C. Chung, and G.E. Stillman Photoluminescence in GaAs and InGaP single layers on InP, Solid State Communications 115, 221(2000).
  25. S. Kalem, A. Curtis, H-C. Kuo and G.E. Stillman Recombination in tensile strained InGaAs quantum well on InP, Applied Physic-A 71, 153 (2000).
  26. S. Kalem, O. Yavuzcetin, and A.Altineller Effect of light exposure and ultrasound on the formation of porous silicon, Journal of Porous Materials 7, 381(2000)
  27. S. Kalem and O. Yavuzcetin Possibility of fabricating light emitting porous silicon devices from gas phase etchants Optics Express 6, 7(2000). http://www.opticsexpress.org/oearchive/source/14455.htm
  28. S. Kalem, A. Curtis, W.B. de Boer, and G.E. Stillman Low temperature photoluminescence in SiGe single quantum wells, Applied Physics-A 66, 23(1998).
  29. S. Kalem and B. Jusserand Physical properties of GaAs grown on glass, Applied Physics-A, Vol.62, No.3, 237(1996).
  30. S. Kalem and M. Rosenbauer Optical and structural investigation of stain-etched silicon, Applied Physics letters 67, 2551(1995).
  31. S. Kalem et al., The effects of surface treatment on optical and vibrational properties of stain etched Silicon, J. Nano-Structured Materials 6, 847(1995).
  32. S. Kalem and G.E.Stillman Deep acceptor levels in molecular beam epitaxial high purity p-type GaAs Japanese Journal of applied Physics 33, Part 1, No.11, 6086(1994).
  33. B. Theys, S. Kalem, A.Lusson, J.Chevallier, N.Gillot, C.Grattepain, Hydrogenation of InAs on GaAs heterostructures, Journal of Applied Physics 70, 1461(1991).
  34. S. Kalem Transport properties of InAs epilayers grown by molecular beam epitaxy, Semiconductor Science and Technology 5, S200(1990).
  35. J. Laskar, J.Kolodzey, S.Boor, K.C.Hsieh, S. Kalem, S.Caracci, A.A.Ketterson, T.Brock, I.Adesida, D.Sivco and A.Y. Cho High indium content graded channel GaInAs/AlInAs pseudomorphic MODFET's, Journal of Electronic Materials 19, 249(1989).
  36. T. Maruyama, R. Prepost, E.L. Garwin, C.K. Sinclair, B.Dunham, and S. Kalem, Enhanced electron spin-polarization in the photoemission from thin GaAs, Applied Physics Letters 55, 1686(1989).
  37. S. Kalem Molecular beam epitaxial growth and transport properties of InAs epilayers, J. of Applied Physics 66, 3097(1989).
  38. R.D.Grober, H.D.Drew, J.Chyi, S. Kalem and H.Morkoc Infrared photoluminescence of InAs epilayers grown on GaAs and Si substrates, J. of Applied Physics 65, 4079(1989).
  39. M.B.Patil, D.Mui, S. Kalem and H.Morkoc Reduced backgating effect in modulation doped field effect transistors by p-n junction isolation, Applied Physics Lett. 53, 2417 (1988).
  40. W. Dobbelaere, D.Huang, S. Kalem and H.Morkoc InGaAs/GaAs multiple quantum well reflection modulators, Electron. Letters 24, 1239(1988).
  41. J. Chyi, S. Kalem, N.S.Kumar, C.W.Litton and H.Morkoc Growth of InSb and InAsSb on GaAs by molecular beam epitaxy, Applied Physics Letters 53, 1092 (1988).
  42. S. Kalem, J.Chyi, H. Morkoc Growth and transport properties of InAs epilayers on GaAs, Applied Physics Letters 53, 1647(1988).
  43. S. Kalem, J.Chyi, C.W.Litton, H.Morkoc, S.C..Kan and A.Yariv Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si, Applied Phys. Lett. 53, 562(1988).
  44. W.Dobbelaere, S. Kalem, D.Huang, S. Unlu, H.Morkoc GaInAs/GaAs strained layer MQW electro-absorption optical modulator and self-electro-optic effect device, Electron Letters 24, 295(1988).
  45. S. Kalem Optical investigation of a-Si:H/a-SiNx:H superlattices, Physical Review B 37, 8837 (1988).
  46. S. Kalem a-Si:H/a-SiNx:H superlattices:confinement or contamination, J. of Superlattices and Microstructures4, 325(1988).
  47. T.M. Searle, M.Hopkinson, M.Edmeades, S. Kalem, I.G.Austin and R.A.Gibson Recombination in a-Si:H based materials:evidence for two slow radiative processes Disordered Semiconductors, Ed. M.Kastner et al., Plenum Publishing Corp., 1987, pp.357.
  48. S. Kalem, R.Moustafoui, J.Bourneix and J.Chevallier Infrared spectroscopy of hydrogenated and chlorinated amorphous silicon, Phil. Mag. 53, 509(1986).
  49. S.A.Dallal, S. Kalem, J.Bourneix, J.Chevallier, M.Toulemonde Transport properties of hydrogenated and chlorinated amorphous silicon:correlation with IR spectra Philosophical Magazine B40, 493(1984).
  50. S.A.Dallal, J.Chevallier, S.Kalem and J.Bourneix Effect of chlorine on the photoluminescence spectra of hydrogenated and chlorinated amorphous silicon prepared by glow discharge, J. of Non-Crystalline Solids, 59/60, 361(1983).
  51. J.Chevallier, S. Kalem, J.Bourneix and M.Vandevyver New silicon-hydrogen infrared vibrational band associated to H-Si-Cl configuration in amorphous silicon matrix:Green's function theory approach, Physica 117B&118B, 874(1983).
  52. J. Chevallier, S. Kalem, S.A.Al Dallal, J.Bourneix Optical and electrical properties of a-Si:H:Cl prepared by glow discharge, J. of Non-Cryst. Solids 51, 277(1982).
  53. PATENTS:
  54. EPO European Patent Office, Method for producing new silicon light source and devices WO 2013164659 A1 2012, PCT/IB2012/052146, EP 12726648.4, 2016.
  55. EURASIAN Patent No: 013649 “Microcrystalline and nanocrystalline structures with low-dielectric constant for high-tech applications” Issue date : 30.06.2010
  56. CHINA patent No:ZL200680017063.1 “Low dielectric constant cryptocrystal layers and nanostructures” Issue date : 04.05.2011
  57. USA Patent application no:11/908,778 “Low dielectric constant cryptocrystal layers and nanostructures” US20080191218A1
  58. Japanese Patent No: 2008-501454 “a wafer bonding method” https://www.google.com.au/patents/EP2845273A1?dq=EP+2845273&cl=en
  59. CANADIAN Patent , Nanostructures et couches cryptocrystallines a faible constant dielectrique, patent No:2602365, 2017/05/09, Ottowa-Hull K1A 0C9 OPIC.
  60. European Patent Office, EP 06710851.4 - 1230, Cryptocrysta, 2020 (PCT/IB2006/050406).

KONFERANS BİLDİRİLERİ

  1. Seref Kalem al., Oxides based resistive switching memories, Procs Volume 11687, Oxide-based Materials and Devices XII; 116871L (2021) https://doi.org/10.1117/12.2585681
  2. S. Kalem, V Sundstrom, Excited Carrier Recombination in Black Silicon, 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), DOI: 10.1109/EUROSOI-ULIS49407.2020.9365291.
  3. H. Cinkaya et al., Annealing effects on the structure of Ge-Sb-Te alloys, 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
  4. Seref Kalem and Villy Sundström, Ultrafast Carrier Dynamics in Black Silicon Quantum Pillars, EUROSOI-ULIS'2020, to be published in IEEE Xplore.
  5. Z. E. Kaya, S. B. Tekin, S. Kalem, “Energy harvesting power management circuit design in 22nm FDSOI technology”, EUROSOI-ULIS 2018, 19-21 March 2018, Granada, Spain, 2018.
  6. Z. E. Kaya, S. B. Tekin, S. Kalem, “Energy Harvesting PMIC Design”, IPSOC Grenoble 2017, 5-8 December, 2017.
  7. S. Kalem, SB Tekin, ZE Kaya, AE Hannas and V Sundström, “Si measurements: SiOx on Si”, IEEE Xplore, EUROSOI-ULIS Workshop and International Conference on Ultimate Integration on Silicon, p.235-238, 2017. DOI: 10.1109/ULIS.2017.7962571
  8. S. Kalem, SB Tekin and R. Roelofs “Feasibility demonstration of new e-NVM cells suitable for integration at 28nm”, IEEE Xplore, EUROSOI-ULIS Workshop and International Conference on Ultimate Integration on Silicon, p.53-56, 2017. DOI: 10.1109/ULIS.2017.7962599
  9. Seref Kalem, Örjan Arthursson, Peter Werner, “Optical response of Si/Ge superlattices with embedded Ge dots” Photonic Global Conference (PGC) 2012, 13-16 December, Singapore. DOI: 10.1109/PGC.2012.6458128
  10. Seref Kalem, Peter Werner and Vadim Talalaev, “Infrared photoluminescence from Si/Ge nanowire grown wafers” Photonic Global Conference (PGC) 2012, 13-16 December, Singapore. doi: 10.1109/PGC.2012.6458108
  11. S. Kalem, “Excited states dynamics in Si quantum pillars”, Hybrid Quantum Systems conference, 26-28 November 2012, Bad Honnef, Germany
  12. S. Kalem, “Photoluminescence dynamics in nanostructured Si surfaces”TFD 29 International Physics Congress, 6-9 Eylül 2012, Bodrum
  13. S. Kalem, NANO-TR VIII, Nanoscience and Nanotechnology Congress 25-29 June 2012, Ankara
  14. S. Kalem, “Controllable Defects for Nanoelectronics”, NANOTR 7 Nanoscience and Nanotechnology Conference, Istanbul, 27 June-01 July 2011.
  15. S. Kalem, P. Werner, M. Hagberg, B. Nilsson, V. Talalaev, Ö. Arthursson, H. Frederiksen, U. Södervall, “Microscopic Si whiskers” 36. International Conference on Micro & Nanoengineering MNE 2010, 15-22 September 2010, Genoa. Microelectronic Engineering 88 (2011) 2593. doi: 10.1016/j.mee.2011.02.072,
  16. S. Kalem, P.Werner, V.Talalaev, Ö.Arthursson “Photoluminescence enhancement from Si/Ge Quantum Structures” Proc. of 6th international conference on nanoscience and technology NANOTR-6, 15-18 June 2010, Cesme.
  17. Seref Kalem, Örjan Arthursson, Igor Romandic Formation of germanates on Germanium by chemical vapor treatment, Thin Solid Films 518, 2377 (2010) http://dx.doi.org/10.1016/j.tsf.2009.09.137 EMRS 2009 Spring Symp. I: Si and germanium issue for future CMOS devices
  18. S. Kalem, “Self-organization of ammonium silicon hexafluoride complex low-dimensional tructures on Silicon”, EMRS, Strasbourg, 2007.
  19. S. Kalem, Nonlinear optical absorption in Ge and GeOI, CADRES 2nd Germanium Workshop, Ghent, Belgium, 23 January 2007.
  20. S. Kalem, E.Lavrov, G. Kissinger, H.Radamson, A.Nylandsted-Larsen and J. Weber, Defect studies in strain-relaxed Si1-xGex alloys, 2nd CADRES Workshop, Khalives, Crete, Greece, 7-11 September 2006.
  21. S. Kalem, Optical characterization of highly doped p-type and n-type Ge, 2nd CADRES Germanium Workshop, Olen, Belgium, 1-2 December 2005.
  22. S. Kalem, Cryptocrystal route to nanotechnology, ‘nanoSECURITY’ Workshop 2005:from basic research to applications, MPI-Halle, Germany, 24-25 October 2005.
  23. S. Kalem Surface modification of Silicon based substrates by exposure to vapor of etching solutions, Abstract Book, p.13, 1st CADRES Workshop on Defects Relevant to Engineering Advanced Silicon-based devices, Catania, Italy, 26-28, 2004.
  24. S. Kalem Deep Level Single Electron Source http://ssqip.tudelft.nl/ The International Conference on Solid State Quantum Information Processing, Abstract Book, p.137, December 15-18, 2003
  25. S.Kalem Sub-gap excited photoluminescence in III-V semiconductor heterostructures NOEKS (Nonlinear Optical Excitation Kinetics in Semiconductors), 10-13 April 2000, Marburg, Germany
  26. Seref Kalem and O. Yavuzcetin, An IR imaging system for remote sensing of chemicals, OSA Optics Infobase, Laser Applications to Chemical and Environmental Analysis, Santa Fe, New Mexico, February 11, 2000 ISBN:1-55752-626-5
  27. S. Kalem and O. Yavuzcetin Effect of Light exposure and ultrasound on the formation of porous silicon, Proc. of the Porous Semiconductor Science and Technology, Mallorca, 16-20 March 1998
  28. S. Kalem, A. Curtis, Q.J. Hartmann, S.Thomas, D. Turnbull, H.Chuang, S.G.Bishop and GE Stillman Defect suppression from the semiconductor heterointerfaces, Proc. of the 9th Int. Conference on InP and Related Materials, Swabisch Gmund, April 2 , 1996, Germany. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=492292
  29. S. Kalem Design and process considerations of infrared multilayer notch filters Technical digest Series 17, OSA, Mtg on Optical interference coatings, June5-9, 1995, Tucson, Arizona.
  30. S. Kalem Optical and structural properties of stain-etched Si, 6th International Conference on Microelectronics, ICM’94, September 5-7, 1994, Istanbul.
  31. S. Kalem Deep electronic levels in GaAs epilayers 6th International Conference on Microelectronics, ICM’94, September 5-7, 1994, Istanbul.
  32. S. Kalem SiGe ve GaAs mezoskopik yapılarda optik olayların incelenmesi TFD 16. Ulusal Fizik Kongresi, Ayvalık, Bildiriler Kitabı, sayfa 27, 26-29 Ağustos 1996.
  33. S. Kalem and J.Heremans Magnetic field dependence of the Hall effect in InAs epilayers grown on GaAs, 13th General Conf. Abstracts of the Condensed Matter Division-European Physical Society, Vol.17A, p.1595, Regensburg, March 29-April 2, 1993, Germany.
  34. S. Kalem UHV-uyumlu bir ECR modülü: Düşük sıcaklık ve basınçta ince film büyütme ve yüzey aşındırma TFD 14.Ulusal Fizik Kongresi, Lefkoşa, Bildiriler Kitabı, sayfa 5, 25-27 Ekim 1993.
  35. S. Kalem, H.H.Lamb, P.K.McLarty, S.Bedge, Y.Ma, T.Yasuda, G.Lucovsky Effects of surface cleaning on defect density at SiO2/Si interfaces, Bulletin of the APS 37, 1836(1992).
  36. S. Kalem, H.H. Lamb, G.A.Ruggles and G.Lucovsky An electron cyclotron resonance(ECR) plasma module for low pressure, low damage etching and cleaning", Bull. of the APS 37, 1836(1992).
  37. H.H. Lamb, S. Kalem, S.Bedge, T.Yasuda, Y.Ma, G.Lucovsky Surface cleaning prior to formation of Si/SiO2 interfaces by remote PECVD, Proc. of Mater. Res. Soc. Symp., 75(1992).
  38. B.Theys, S. Kalem, A. Lusson, J.Chevallier, C.Grattepain, M.Stutzman Hydrogenation in InAs on GaAs:diffusion behavior, electrical and optical effects Proc. of the 16th Int. Conf. on Defects in Semiconductors, Lehigh-Pennsylvania, July 22-26, 1991.
  39. S. Kalem, S.A.Stockman, M.A.Plano, I.Szafranek, M.J. McCollum and G.E. Stillman, "Investigation of acceptor states in high-purity p-GaAs, Bulletin of APS 35, 413(1990).
  40. T. Wojtowics, G.L. Yang, J.K. Furdyna and S. Kalem Far infrared magneto-absorption in MBE-grown InAs films, Bull. of the American Physical Society 35, 344(1990).
  41. S. Kalem and I.G. Austin Gap-state spectroscopy of amorphous silicon nitride, Bulletin of the American Physical Society 34, 1537 (1989)
  42. S. Kalem Transport properties of InAs epilayers grown on GaAs, Bulletin of the American Physical Society 34, 1536(1989).
  43. D. Huang, J.Chyi, S.Kalem, H.Morkoc, Excitonic absorption in p-type modulation doped GaAs quantum wells, Bull. of Amer. Physical Society, Vol.33, 365(1988).
  44. J.I.Chyi, S. Kalem, C.W. Litton, H.Morkoc MBE growth and characterization of InSb and InAsSb on GaAs, Proc. of the Electronic Conf., Colorado, June 22-24, 1988.
  45. S. Kalem Optical studies of a-Si:H/a-SiNx:H superlattices Proc. of the 3rd Int. Conf. on Modulated Semiconductor Structures, J. de Physique C5, 191(1987)
  46. S. Kalem, M.Hopkinson, T.M. Searle, I.G. Austin, W.E. Spear and P.G. LeComber Gap state absorption and luminescence studies of a-Si:H/a-SiN:H and a-Si:H modulation doped multilayers Proc.18th Int. Conf. Physics of Semiconductors 1, Engstrom, Stockholm, 1986, pp.747.
  47. S. Kalem, T.M.Searle, I.G.Austin Photothermal investigation of a-Si/SiNx quantum wells Solid State Physics Conf. Abstracts, Imperial College, 17-19 Dec. 1986, London, UK.
  48. S. Kalem, Amorphous silicon based solar cells Proc. of the 3rd International Congress on New Energy Sources, Istanbul, 25-27 June, 1984.
  49. S.A. Dallal, J.Chevallier, S. Kalem and J. Bourneix “Correlation between electrical and vibrational properties of a-Si:H:Cl prepared by glow discharge", Proc. of the 5th Int. Conf. on Physics of Non-Crystalline Solids, J. de Physique, C9, Suppl.12, Tome 43, 323(1982).
  50. S. Kalem, J.Chevallier, S.Al Dallal and J.Bourneix Infrared vibrational spectra of chlorinated and hydrogenated amorphous silicon Proc. of the 9th Int. Conf. on Amorphous and Liquid Semiconductors, J. de Physique C4, suppl.10, Tome 42, 361(1981).

KİTAPLAR

  1. Chapter in Disordered Semiconductors, "Recombination in a-Si:H: evidence for two slow radiative processes", Ed. M Kastner et al., Plenum Publishing Corp., 1987